IXFK26N100P

Specifications

Pin Sayısı

3

Typical Gate Charge Vgs Nc

197@10V

Maximum Power Dissipation Mw

780000

Process Technology

HiperFET

Minimum Operating Temperature C

-55

Maximum Drain Source Voltage V

1000

Eu Rohs

Compliant with Exemption

Number Of Elements Per Chip

1

Typical Turnon Delay Time Ns

45

Typical Fall Time Ns

50

Svhc

Yes

Typical Gate Charge10v Nc

197

Typical Turnoff Delay Time Ns

72

Configuration

Single

Tab

Tab

Svhc Exceeds Threshold

Yes

Parça Durumu

Active

Channel Mode

Enhancement

Typical Rise Time Ns

45

Maximum Continuous Drain Current A

20

Package Width

5.13(Max)

Maximum Gate Source Voltage V

±30

Typical Input Capacitance Vds Pf

11900@25V

Maximum Operating Temperature C

150

Supplier Package

TO-264

Ppap

No

Package Length

19.96(Max)

Mounting

Through Hole

Category

Power MOSFET

Package Height

26.16(Max)

Automotive

No

Channel Type

N

Pcb Changed

3

Maximum Drain Source Resistance Mohm

390@10V