IXFK24N80P

Specifications

Package Length

20.29(Max)

Rds On Drainsource Resistance

400 mOhms

Mounting

Through Hole

Category

Power MOSFET

Package Height

26.59(Max)

Automotive

No

Pcb Changed

3

Maximum Drain Source Resistance Mohm

400@10V

Eccn Us

EAR99

Channel Type

N

Id Continuous Drain Current

24 A

Qg Gate Charge

105 nC

Package Width

5.31(Max)

Maximum Continuous Drain Current A

24

Maximum Gate Source Voltage V

±30

Typical Input Capacitance Vds Pf

7200@25V

Ppap

No

Maximum Operating Temperature C

150

Vds Drainsource Breakdown Voltage

800 V

Supplier Package

TO-264

Number Of Elements Per Chip

1

Typical Turnon Delay Time Ns

32

Technology

Si

Typical Fall Time Ns

24

Typical Turnoff Delay Time Ns

75

Vgs Gatesource Voltage

- 30 V, + 30 V

Number Of Channels

1 Channel

Typical Gate Charge10v Nc

105

Pd Power Dissipation

650 W

Parça Durumu

Active

Tab

Tab

Configuration

Single

Minimum Operating Temperature

- 55 C

Channel Mode

Enhancement

Typical Rise Time Ns

27

Typical Gate Charge Vgs Nc

105@10V

Maks. Çalışma Sıcaklığı

+ 150 C

Pin Sayısı

3

Maximum Power Dissipation Mw

650000

Kılıf / Paket

TO-264-3