IXFK240N25X3

Specifications

Category

Power MOSFET

Package Length

20.3(Max)

Rds On Drainsource Resistance

4.1 mOhms

Mounting

Through Hole

Pcb Changed

3

Maximum Drain Source Resistance Mohm

5@10V

Eccn Us

EAR99

Channel Type

N

Continuous Drain Current Id

240A

Package Height

26.3(Max)

Maximum Gate Source Voltage V

±20

Qg Gate Charge

345 nC

Id Continuous Drain Current

240 A

Package Width

5.3(Max)

Maximum Continuous Drain Current A

240

Power Dissipation

1.25kW

Vds Drainsource Breakdown Voltage

250 V

Maximum Operating Temperature C

150

Supplier Package

TO-264

Typical Input Capacitance Vds Pf

23800@25V

Typical Turnoff Delay Time Ns

180

Number Of Channels

1 Channel

Vgs Gatesource Voltage

- 20 V, + 20 V

Typical Gate Charge10v Nc

345

Seri

X3-Class

Pd Power Dissipation

1.25 kW

Technology

Si

Typical Fall Time Ns

14

Typical Turnon Delay Time Ns

36

Number Of Elements Per Chip

1

Channel Mode

Enhancement

Typical Rise Time Ns

32

Parça Durumu

Active

Hts

8541.29.00.95

Tab

Tab

Configuration

Single

Minimum Operating Temperature

- 55 C

Maximum Power Dissipation Mw

1250000

Typical Gate Charge Vgs Nc

345@10V

Maks. Çalışma Sıcaklığı

+ 150 C