IXFK240N15T2

Specifications

Vgs Th Gatesource Threshold Voltage

2.5 V

Minimum Operating Temperature C

-55

Process Technology

GigaMOS

Eu Rohs

Compliant with Exemption

Maximum Drain Source Voltage V

150

Montaj Stili

Through Hole

Transistor Polarity

N-Channel

Kılıf / Paket

TO-264-3

Maximum Power Dissipation Mw

1250000

Pin Sayısı

3

Maks. Çalışma Sıcaklığı

+ 175 C

Typical Gate Charge Vgs Nc

460@10V

Typical Rise Time Ns

125

Channel Mode

Enhancement

Minimum Operating Temperature

- 55 C

Configuration

Single

Tab

Tab

Parça Durumu

Active

Pd Power Dissipation

1.25 mW

Typical Gate Charge10v Nc

460

Vgs Gatesource Voltage

- 20 V, + 20 V

Number Of Channels

1 Channel

Typical Turnoff Delay Time Ns

77

Number Of Elements Per Chip

1

Typical Turnon Delay Time Ns

48

Typical Fall Time Ns

145

Technology

Si

Supplier Package

TO-264

Vds Drainsource Breakdown Voltage

150 V

Maximum Operating Temperature C

175

Ppap

No

Typical Input Capacitance Vds Pf

32000@25V

Maximum Gate Source Voltage V

±20

Maximum Continuous Drain Current A

240

Package Width

5.13(Max)

Qg Gate Charge

460 nC

Id Continuous Drain Current

240 A

Channel Type

N

Maximum Drain Source Resistance Mohm

5.2@10V

Pcb Changed

3