IXFK170N25X3

Specifications

Number Of Elements Per Chip

1

Typical Fall Time Ns

7

Technology

Si

Typical Turnon Delay Time Ns

18

Seri

X3-Class

Pd Power Dissipation

960 W

Typical Gate Charge10v Nc

190

Vgs Gatesource Voltage

- 20 V, + 20 V

Number Of Channels

1 Channel

Typical Turnoff Delay Time Ns

62

Minimum Operating Temperature

- 55 C

Configuration

Single

Parça Durumu

Active

Typical Rise Time Ns

10

Channel Mode

Enhancement

Maks. Çalışma Sıcaklığı

+ 150 C

Typical Gate Charge Vgs Nc

190@10V

Maximum Power Dissipation Mw

890000

Montaj Stili

Through Hole

Transistor Polarity

N-Channel

Kılıf / Paket

TO-264-3

Vgs Th Gatesource Threshold Voltage

2.5 V

Minimum Operating Temperature C

-55

Eu Rohs

Compliant

Maximum Drain Source Voltage V

250

Rds On Drainsource Resistance

6.1 mOhms

Category

Power MOSFET

Automotive

No

Channel Type

N

Eccn Us

EAR99

Maximum Drain Source Resistance Mohm

7.4@10V

Maximum Continuous Drain Current A

170

Qg Gate Charge

190 nC

Id Continuous Drain Current

170 A

Maximum Gate Source Voltage V

±20

Typical Input Capacitance Vds Pf

13500@25V

Vds Drainsource Breakdown Voltage

250 V

Maximum Operating Temperature C

150

Ppap

No