IXFK170N20P

Specifications

Channel Mode

Enhancement

Typical Rise Time Ns

25

Parça Durumu

Active

Configuration

Single

Tab

Tab

Hts

8541.29.00.95

Typical Turnoff Delay Time Ns

50

Typical Gate Charge10v Nc

185

Number Of Elements Per Chip

1

Typical Turnon Delay Time Ns

40

Typical Fall Time Ns

14

Maximum Drain Source Voltage V

200

Eu Rohs

Compliant with Exemption

Process Technology

HiperFET

Minimum Operating Temperature C

-55

Maximum Power Dissipation Mw

1250000

Typical Gate Charge Vgs Nc

185@10V

Pin Sayısı

3

Pcb Changed

3

Maximum Drain Source Resistance Mohm

14@10V

Channel Type

N

Package Height

26.16(Max)

Automotive

No

Category

Power MOSFET

Package Length

19.96(Max)

Mounting

Through Hole

Ppap

No

Maximum Operating Temperature C

175

Supplier Package

TO-264

Typical Input Capacitance Vds Pf

11400@25V

Maximum Gate Source Voltage V

±20

Package Width

5.13(Max)

Maximum Continuous Drain Current A

170