IXFK150N30X3

Specifications

Maximum Drain Source Voltage V

300

Minimum Operating Temperature C

-55

Vgs Th Gatesource Threshold Voltage

4.5 V

Kılıf / Paket

TO-264-3

Transistor Polarity

N-Channel

Maks. Çalışma Sıcaklığı

+ 150 C

Channel Mode

Enhancement

Typical Rise Time Ns

32

Configuration

Single

Vgs Gatesource Voltage

- 20 V, + 20 V

Typical Gate Charge10v Nc

177

Technology

Si

Number Of Elements Per Chip

1

Power Dissipation

890W

Maximum Operating Temperature C

150

Vds Drainsource Breakdown Voltage

300 V

Supplier Package

TO-264

Maximum Gate Source Voltage V

±20

Id Continuous Drain Current

150 A

Pcb Changed

3

Eccn Us

EAR99

Channel Type

N

Continuous Drain Current Id

150A

Package Height

26.3(Max)

Automotive

No

Category

Power MOSFET

Package Length

20.3(Max)

Eu Rohs

Compliant with Exemption

Montaj Stili

Through Hole

Maximum Power Dissipation Mw

890000

Typical Gate Charge Vgs Nc

177@10V

Pin Sayısı

3

Parça Durumu

Active

Tab

Tab

Hts

8541.29.00.95

Minimum Operating Temperature

- 55 C

Typical Turnoff Delay Time Ns

187

Number Of Channels

1 Channel

Pd Power Dissipation

890 W

Typical Fall Time Ns

14