IXFK140N20P

Specifications

Process Technology

HiperFET

Minimum Operating Temperature C

-55

Maximum Drain Source Voltage V

200

Eu Rohs

Compliant with Exemption

Maximum Power Dissipation Mw

830000

Pin Sayısı

3

Typical Gate Charge Vgs Nc

240@10V

Channel Mode

Enhancement

Typical Rise Time Ns

35

Configuration

Single

Tab

Tab

Hts

8541.29.00.95

Parça Durumu

Active

Typical Gate Charge10v Nc

240

Typical Turnoff Delay Time Ns

150

Number Of Elements Per Chip

1

Typical Fall Time Ns

90

Typical Turnon Delay Time Ns

30

Maximum Operating Temperature C

175

Supplier Package

TO-264

Ppap

No

Typical Input Capacitance Vds Pf

7500@25V

Maximum Gate Source Voltage V

±20

Maximum Continuous Drain Current A

140

Package Width

5.13(Max)

Channel Type

N

Pcb Changed

3

Maximum Drain Source Resistance Mohm

18@10V

Package Height

26.16(Max)

Automotive

No

Category

Power MOSFET

Package Length

19.96(Max)

Mounting

Through Hole