IXFK110N07

Specifications

Typical Input Capacitance Vds Pf

9000@25V

Ppap

No

Vds Drainsource Breakdown Voltage

70 V

Maximum Operating Temperature C

150

Supplier Package

TO-264AA

Id Continuous Drain Current

110 A

Package Width

5.13(Max)

Maximum Continuous Drain Current A

110

Maximum Gate Source Voltage V

±20

Package Height

26.16(Max)

Automotive

No

Pcb Changed

3

Maximum Drain Source Resistance Mohm

6@10V

Channel Type

N

Package Length

19.96(Max)

Rds On Drainsource Resistance

6 mOhms

Mounting

Through Hole

Category

Power MOSFET

Kılıf / Paket

TO-264-3

Transistor Polarity

N-Channel

Montaj Stili

Through Hole

Maximum Drain Source Voltage V

70

Eu Rohs

Compliant

Process Technology

HiperFET

Minimum Operating Temperature C

-55

Typical Gate Charge Vgs Nc

480@10V

Material

Si

Maks. Çalışma Sıcaklığı

+ 150 C

Pin Sayısı

3

Maximum Power Dissipation Mw

500000

Parça Durumu

NRND

Hts

8541.29.00.95

Tab

Tab

Configuration

Single

Minimum Operating Temperature

- 55 C

Channel Mode

Enhancement

Typical Rise Time Ns

60

Number Of Elements Per Chip

1

Typical Turnon Delay Time Ns

30

Technology

Si