IXFH94N30T

Specifications

Maximum Power Dissipation Mw

890000

Maximum Idss Ua

50

Pin Sayısı

3

Typical Gate Charge Vgs Nc

190@10V

Minimum Operating Temperature C

-55

Process Technology

HiperFET

Eu Rohs

Compliant with Exemption

Maximum Drain Source Voltage V

300

Typical Gate Charge10v Nc

190

Typical Turnoff Delay Time Ns

45

Number Of Elements Per Chip

1

Typical Turnon Delay Time Ns

40

Typical Fall Time Ns

12

Svhc

Yes

Maximum Gate Threshold Voltage V

5

Typical Rise Time Ns

14

Channel Mode

Enhancement

Tab

Tab

Configuration

Single

Parça Durumu

Active

Svhc Exceeds Threshold

Yes

Maximum Gate Source Leakage Current Na

200

Maximum Gate Source Voltage V

±20

Maximum Continuous Drain Current A

94

Package Width

5.3(Max)

Supplier Package

TO-247AD

Maximum Operating Temperature C

150

Ppap

No

Typical Input Capacitance Vds Pf

11400@25V

Category

Power MOSFET

Mounting

Through Hole

Package Length

16.26(Max)

Channel Type

N

Maximum Drain Source Resistance Mohm

36@10V

Pcb Changed

3

Automotive

No

Package Height

21.46(Max)