IXFH90N20X3

Specifications

Pd Power Dissipation

390 W

Typical Turnoff Delay Time Ns

62

Number Of Channels

1 Channel

Typical Fall Time Ns

13

Typical Turnon Delay Time Ns

22

Hts

8541.29.00.95

Tab

Tab

Minimum Operating Temperature

- 55 C

Svhc Exceeds Threshold

Yes

Parça Durumu

Active

Maximum Power Dissipation Mw

390000

Pin Sayısı

3

Typical Gate Charge Vgs Nc

78@10V

Eu Rohs

Compliant with Exemption

Montaj Stili

Through Hole

Rds On Drainsource Resistance

12.8 mOhms

Mounting

Through Hole

Maximum Drain Source Resistance Mohm

12.8@10V

Maximum Continuous Drain Current A

90

Qg Gate Charge

78 nC

Package Width

5.3(Max)

Ppap

No

Typical Input Capacitance Vds Pf

5420@25V

Typical Gate Charge10v Nc

78

Vgs Gatesource Voltage

- 20 V, + 20 V

Number Of Elements Per Chip

1

Technology

Si

Svhc

Yes

Channel Mode

Enhancement

Typical Rise Time Ns

26

Configuration

Single

Maks. Çalışma Sıcaklığı

+ 150 C

Minimum Operating Temperature C

-55

Vgs Th Gatesource Threshold Voltage

2.5 V

Maximum Drain Source Voltage V

200

Transistor Polarity

N-Channel

Kılıf / Paket

TO-247-3

Category

Power MOSFET

Package Length

16.24(Max)

Eccn Us

EAR99