IXFH80N65X2

Specifications

Case Connection

DRAIN

Channel Mode

Enhancement

Ds Breakdown Voltagemin

650V

Typical Rise Time Ns

24

Montaj Tipi

Through Hole

Configuration

Single

Typical Gate Charge10v Nc

140

Seri

HiPerFET™

Svhc

Yes

Number Of Elements Per Chip

1

Maximum Drain Source Voltage V

650

Transistor Element Material

SILICON

Minimum Operating Temperature C

-55

Kılıf / Paket

TO-247-3

Drainsource On Resistancemax

0.038Ohm

ECCN Kodu

EAR99

Lead Shape

Through Hole

Pcb Changed

3

Eccn Us

EAR99

Number Of Elements

1

Channel Type

N

Terminal Sayısı

3

Package Height

21.45(Max)

Continuous Drain Current Id

80A

Automotive

No

Nem Hassasiyeti (MSL)

1 (Unlimited)

Gate Charge Qg Max Vgs

143nC @ 10V

Category

Power MOSFET

Drive Voltage Max Rds On Min Rds On

10V

Package Length

16.24(Max)

Fet Type

N-Channel

Operating Mode

ENHANCEMENT MODE

Maximum Operating Temperature C

150

Supplier Package

TO-247AD

Standard Package Name

TO-247

Additional Feature

AVALANCHE RATED

Maximum Gate Source Voltage V

±30

Rds On Max Id Vgs

40m Ω @ 40A, 10V

Current Continuous Drain Id25

80A Tc

Svhc Exceeds Threshold

Yes