IXFH7N100P

Specifications

Typical Fall Time Ns

44

Typical Turnon Delay Time Ns

25

Pd Power Dissipation

300 W

Number Of Channels

1 Channel

Typical Turnoff Delay Time Ns

42

Minimum Operating Temperature

- 55 C

Hts

8541.29.00.95

Tab

Tab

Parça Durumu

Active

Svhc Exceeds Threshold

Yes

Pin Sayısı

3

Typical Gate Charge Vgs Nc

47@10V

Maximum Power Dissipation Mw

300000

Montaj Stili

Through Hole

Eu Rohs

Compliant with Exemption

Mounting

Through Hole

Rds On Drainsource Resistance

1.9 Ohms

Maximum Drain Source Resistance Mohm

1900@10V

Maximum Continuous Drain Current A

7

Package Width

5.21(Max)

Qg Gate Charge

47 nC

Typical Input Capacitance Vds Pf

2590@25V

Ppap

No

Number Of Elements Per Chip

1

Technology

Si

Svhc

Yes

Typical Gate Charge10v Nc

47

Vgs Gatesource Voltage

- 30 V, + 30 V

Configuration

Single

Typical Rise Time Ns

49

Channel Mode

Enhancement

Maks. Çalışma Sıcaklığı

+ 150 C

Transistor Polarity

N-Channel

Kılıf / Paket

TO-247-3

Vgs Th Gatesource Threshold Voltage

3 V

Minimum Operating Temperature C

-55

Process Technology

HiperFET

Maximum Drain Source Voltage V

1000

Package Length

16.13(Max)

Category

Power MOSFET