IXFH72N30X3

Specifications

Maximum Power Dissipation Mw

390000

Pin Sayısı

3

Typical Gate Charge Vgs Nc

82@10V

Eu Rohs

Compliant with Exemption

Montaj Stili

Through Hole

Pd Power Dissipation

390 W

Typical Turnoff Delay Time Ns

86

Number Of Channels

1 Channel

Typical Turnon Delay Time Ns

22

Typical Fall Time Ns

11

Hts

8541.29.00.95

Tab

Tab

Minimum Operating Temperature

- 55 C

Svhc Exceeds Threshold

Yes

Parça Durumu

Active

Maximum Continuous Drain Current A

72

Qg Gate Charge

82 nC

Package Width

5.3(Max)

Ppap

No

Typical Input Capacitance Vds Pf

5400@25V

Rds On Drainsource Resistance

19 mOhms

Mounting

Through Hole

Maximum Drain Source Resistance Mohm

19@10V

Maks. Çalışma Sıcaklığı

+ 150 C

Minimum Operating Temperature C

-55

Vgs Th Gatesource Threshold Voltage

2.5 V

Maximum Drain Source Voltage V

300

Transistor Polarity

N-Channel

Kılıf / Paket

To-247-3

Typical Gate Charge10v Nc

82

Vgs Gatesource Voltage

- 30 V, + 30 V

Technology

Si

Number Of Elements Per Chip

1

Svhc

Yes

Channel Mode

Enhancement

Typical Rise Time Ns

25

Configuration

Single

Maximum Gate Source Voltage V

±20

Id Continuous Drain Current

72 A

Maximum Operating Temperature C

150