IXFH70N30Q3

Specifications

Process Technology

HiperFET

Minimum Operating Temperature C

-55

Maximum Drain Source Voltage V

300

Eu Rohs

Compliant with Exemption

Pin Sayısı

3

Typical Gate Charge Vgs Nc

98@10V

Maximum Power Dissipation Mw

830000

Maximum Idss Ua

10

Tab

Tab

Configuration

Single

Svhc Exceeds Threshold

Yes

Parça Durumu

Active

Maximum Gate Threshold Voltage V

6

Channel Mode

Enhancement

Typical Rise Time Ns

14

Number Of Elements Per Chip

1

Typical Turnon Delay Time Ns

33

Typical Fall Time Ns

9

Svhc

Yes

Typical Gate Charge10v Nc

98

Typical Turnoff Delay Time Ns

38

Typical Input Capacitance Vds Pf

4735@25V

Maximum Operating Temperature C

150

Supplier Package

TO-247

Ppap

No

Maximum Continuous Drain Current A

70

Package Width

5.3(Max)

Maximum Gate Source Leakage Current Na

100

Maximum Gate Source Voltage V

±20

Package Height

21.46(Max)

Automotive

No

Channel Type

N

Pcb Changed

3

Maximum Drain Source Resistance Mohm

54@10V

Package Length

16.26(Max)

Mounting

Through Hole

Category

Power MOSFET