IXFH6N120

Specifications

Category

Power MOSFET

Package Length

16.26(Max)

Mounting

Through Hole

Channel Type

N

Pcb Changed

3

Maximum Drain Source Resistance Mohm

2600@10V

Package Height

21.46(Max)

Automotive

No

Maximum Gate Source Voltage V

±20

Maximum Continuous Drain Current A

6

Package Width

5.3(Max)

Maximum Operating Temperature C

150

Supplier Package

TO-247AD

Ppap

No

Typical Input Capacitance Vds Pf

1950@25V

Typical Gate Charge10v Nc

56

Typical Turnoff Delay Time Ns

42

Typical Fall Time Ns

18

Typical Turnon Delay Time Ns

28

Number Of Elements Per Chip

1

Svhc

Yes

Channel Mode

Enhancement

Typical Rise Time Ns

33

Configuration

Single

Tab

Tab

Svhc Exceeds Threshold

Yes

Parça Durumu

NRND

Maximum Power Dissipation Mw

300000

Pin Sayısı

3

Material

Si

Typical Gate Charge Vgs Nc

56@10V

Process Technology

HiperFET

Minimum Operating Temperature C

-55

Maximum Drain Source Voltage V

1200

Eu Rohs

Compliant with Exemption