IXFH6N100F

Specifications

Channel Mode

Enhancement

Typical Rise Time Ns

14

Hts

8541.29.00.95

Tab

Tab

Configuration

Single

Svhc Exceeds Threshold

Yes

Parça Durumu

Active

Typical Gate Charge10v Nc

54

Typical Turnoff Delay Time Ns

32

Typical Turnon Delay Time Ns

12

Typical Fall Time Ns

14

Number Of Elements Per Chip

1

Svhc

Yes

Minimum Operating Temperature C

-55

Maximum Drain Source Voltage V

1000

Eu Rohs

Compliant with Exemption

Maximum Power Dissipation Mw

180000

Pin Sayısı

3

Typical Gate Charge Vgs Nc

54@10V

Eccn Us

EAR99

Channel Type

N

Pcb Changed

3

Maximum Drain Source Resistance Mohm

1900@10V

Package Height

21.46(Max)

Automotive

No

Category

Power MOSFET

Package Length

16.26(Max)

Mounting

Through Hole

Maximum Operating Temperature C

150

Supplier Package

TO-247AD

Ppap

No

Typical Input Capacitance Vds Pf

1870@25V

Maximum Gate Source Voltage V

±20

Maximum Continuous Drain Current A

6

Package Width

5.3(Max)