IXFH69N30P

Specifications

Mounting

Through Hole

Package Length

16.26(Max)

Category

Power MOSFET

Automotive

No

Package Height

21.46(Max)

Maximum Drain Source Resistance Mohm

49@10V

Pcb Changed

3

Channel Type

N

Eccn Us

EAR99

Package Width

5.3(Max)

Maximum Continuous Drain Current A

69

Maximum Gate Source Voltage V

±20

Typical Input Capacitance Vds Pf

4960@25V

Ppap

No

Supplier Package

TO-247

Maximum Operating Temperature C

150

Svhc

Yes

Typical Turnon Delay Time Ns

25

Typical Fall Time Ns

27

Number Of Elements Per Chip

1

Typical Turnoff Delay Time Ns

75

Typical Gate Charge10v Nc

156

Parça Durumu

Active

Svhc Exceeds Threshold

Yes

Hts

8541.29.00.95

Tab

Tab

Configuration

Single

Typical Rise Time Ns

25

Channel Mode

Enhancement

Typical Gate Charge Vgs Nc

156@10V

Pin Sayısı

3

Maximum Power Dissipation Mw

500000

Eu Rohs

Compliant with Exemption

Maximum Drain Source Voltage V

300

Minimum Operating Temperature C

-55

Process Technology

HiperFET