IXFH50N30Q3

Specifications

Mounting

Through Hole

Rds On Drainsource Resistance

80 mOhms

Maximum Drain Source Resistance Mohm

80@10V

Package Width

5.3(Max)

Qg Gate Charge

65 nC

Maximum Continuous Drain Current A

50

Typical Input Capacitance Vds Pf

3160@25V

Ppap

No

Typical Fall Time Ns

9

Typical Turnon Delay Time Ns

14

Number Of Channels

1 Channel

Typical Turnoff Delay Time Ns

24

Pd Power Dissipation

690 W

Parça Durumu

Active

Svhc Exceeds Threshold

Yes

Minimum Operating Temperature

- 55 C

Hts

8541.29.00.95

Tab

Tab

Typical Gate Charge Vgs Nc

65@10V

Pin Sayısı

3

Maximum Power Dissipation Mw

690000

Montaj Stili

Through Hole

Eu Rohs

Compliant with Exemption

Package Length

16.24(Max)

Category

Power MOSFET

Automotive

No

Package Height

21.45(Max)

Pcb Changed

3

Channel Type

N

Eccn Us

EAR99

Id Continuous Drain Current

50 A

Maximum Gate Source Voltage V

±20

Standard Package Name

TO-247

Supplier Package

TO-247AD

Maximum Operating Temperature C

150

Vds Drainsource Breakdown Voltage

300 V

Svhc

Yes

Number Of Elements Per Chip

1

Technology

Si

Vgs Gatesource Voltage

- 30 V, + 30 V