IXFH50N20

Specifications

Maximum Power Dissipation Mw

300000

Typical Gate Charge Vgs Nc

190@10V

Pin Sayısı

3

Eu Rohs

Compliant with Exemption

Maximum Drain Source Voltage V

200

Minimum Operating Temperature C

-55

Typical Turnoff Delay Time Ns

72

Typical Gate Charge10v Nc

190

Svhc

Yes

Number Of Elements Per Chip

1

Typical Turnon Delay Time Ns

18

Typical Fall Time Ns

16

Typical Rise Time Ns

15

Channel Mode

Enhancement

Parça Durumu

NRND

Svhc Exceeds Threshold

Yes

Configuration

Single

Hts

8541.29.00.95

Tab

Tab

Maximum Gate Source Voltage V

±20

Package Width

5.3(Max)

Maximum Continuous Drain Current A

50

Ppap

No

Supplier Package

TO-247AD

Maximum Operating Temperature C

150

Typical Input Capacitance Vds Pf

4400@25V

Category

Power MOSFET

Mounting

Through Hole

Package Length

16.26(Max)

Maximum Drain Source Resistance Mohm

45@10V

Pcb Changed

3

Channel Type

N

Eccn Us

EAR99

Automotive

No

Package Height

21.46(Max)