IXFH44N50Q3

Specifications

Maximum Gate Source Leakage Current Na

100

Maximum Gate Source Voltage V

±30

Maximum Continuous Drain Current A

44

Package Width

5.3(Max)

Maximum Operating Temperature C

150

Supplier Package

TO-247

Ppap

No

Typical Input Capacitance Vds Pf

4800@25V

Category

Power MOSFET

Package Length

16.26(Max)

Mounting

Through Hole

Channel Type

N

Pcb Changed

3

Maximum Drain Source Resistance Mohm

140@10V

Package Height

21.46(Max)

Automotive

No

Maximum Idss Ua

25

Maximum Power Dissipation Mw

830000

Pin Sayısı

3

Typical Gate Charge Vgs Nc

93@10V

Process Technology

HiperFET

Minimum Operating Temperature C

-55

Maximum Drain Source Voltage V

500

Eu Rohs

Compliant with Exemption

Typical Gate Charge10v Nc

93

Typical Turnoff Delay Time Ns

37

Number Of Elements Per Chip

1

Typical Turnon Delay Time Ns

30

Typical Fall Time Ns

9

Svhc

Yes

Maximum Gate Threshold Voltage V

6.5

Channel Mode

Enhancement

Typical Rise Time Ns

13

Configuration

Single

Tab

Tab

Svhc Exceeds Threshold

Yes

Parça Durumu

Active