IXFH42N50P2

Specifications

Maximum Gate Source Voltage V

±30

Id Continuous Drain Current

42 A

Supplier Package

TO-247

Maximum Operating Temperature C

150

Vds Drainsource Breakdown Voltage

500 V

Category

Power MOSFET

Package Length

16.26(Max)

Channel Type

N

Eccn Us

EAR99

Pcb Changed

3

Automotive

No

Package Height

21.46(Max)

Maks. Çalışma Sıcaklığı

+ 150 C

Vgs Th Gatesource Threshold Voltage

2.5 V

Minimum Operating Temperature C

-55

Process Technology

HiperFET

Maximum Drain Source Voltage V

500

Transistor Polarity

N-Channel

Kılıf / Paket

TO-247-3

Typical Gate Charge10v Nc

92

Vgs Gatesource Voltage

- 30 V, + 30 V

Number Of Elements Per Chip

1

Technology

Si

Svhc

Yes

Typical Rise Time Ns

12

Channel Mode

Enhancement

Configuration

Single Dual Drain

Maximum Continuous Drain Current A

42

Package Width

5.3(Max)

Qg Gate Charge

92 nC

Ppap

No

Typical Input Capacitance Vds Pf

5300@25V

Mounting

Through Hole

Rds On Drainsource Resistance

145 mOhms

Maximum Drain Source Resistance Mohm

145@10V

Maximum Power Dissipation Mw

830000

Pin Sayısı

3

Typical Gate Charge Vgs Nc

92@10V

Eu Rohs

Compliant with Exemption

Montaj Stili

Through Hole