IXFH220N20X3

Specifications

Configuration

Single

Channel Mode

Enhancement

Typical Rise Time Ns

27

Svhc

Yes

Number Of Elements Per Chip

1

Technology

Si

Vgs Gatesource Voltage

- 20 V, + 20 V

Typical Gate Charge10v Nc

204

Kılıf / Paket

TO-247-3

Transistor Polarity

N-Channel

Maximum Drain Source Voltage V

200

Vgs Th Gatesource Threshold Voltage

2.5 V

Minimum Operating Temperature C

-55

Maks. Çalışma Sıcaklığı

+ 150 C

Continuous Drain Current Id

220A

Package Height

21.34(Max)

Automotive

No

Pcb Changed

3

Eccn Us

EAR99

Channel Type

N

Package Length

16.13(Max)

Category

Power MOSFET

Power Dissipation

890W

Vds Drainsource Breakdown Voltage

200 V

Maximum Operating Temperature C

150

Supplier Package

TO-247

Id Continuous Drain Current

220 A

Maximum Gate Source Voltage V

±20

Svhc Exceeds Threshold

Yes

Parça Durumu

Active

Tab

Tab

Hts

8541.29.00.95

Minimum Operating Temperature

- 55 C

Typical Fall Time Ns

17

Typical Turnon Delay Time Ns

37

Typical Turnoff Delay Time Ns

155

Number Of Channels

1 Channel

Pd Power Dissipation

890 W

Montaj Stili

Through Hole

Eu Rohs

Compliant with Exemption