IXFH20N80P

Specifications

Id Continuous Drain Current

20 A

Maximum Gate Source Voltage V

±30

Standard Package Name

TO-247

Maximum Operating Temperature C

150

Vds Drainsource Breakdown Voltage

800 V

Supplier Package

TO-247AD

Package Length

16.24(Max)

Category

Power MOSFET

Package Height

21.45(Max)

Automotive

No

Pcb Changed

3

Eccn Us

EAR99

Channel Type

N

Lead Shape

Through Hole

Maks. Çalışma Sıcaklığı

+ 150 C

Kılıf / Paket

TO-247-3

Transistor Polarity

N-Channel

Maximum Drain Source Voltage V

800

Minimum Operating Temperature C

-55

Vgs Th Gatesource Threshold Voltage

5 V

Svhc

Yes

Technology

Si

Number Of Elements Per Chip

1

Vgs Gatesource Voltage

- 30 V, + 30 V

Typical Gate Charge10v Nc

86

Seri

IXFH20N80

Configuration

Single

Channel Mode

Enhancement

Typical Rise Time Ns

24

Qg Gate Charge

86 nC

Package Width

5.3(Max)

Maximum Continuous Drain Current A

20

Typical Input Capacitance Vds Pf

4685@25V

Ppap

No

Rds On Drainsource Resistance

520 mOhms

Mounting

Through Hole

Maximum Drain Source Resistance Mohm

520@10V

Typical Gate Charge Vgs Nc

86@10V

Pin Sayısı

3

Maximum Power Dissipation Mw

500000