IXFH20N50P3

Specifications

Svhc

Yes

Typical Fall Time Ns

9

Typical Turnon Delay Time Ns

10

Number Of Elements Per Chip

1

Typical Turnoff Delay Time Ns

43

Typical Gate Charge10v Nc

36

Svhc Exceeds Threshold

Yes

Parça Durumu

Active

Configuration

Single

Tab

Tab

Hts

8541.29.00.95

Channel Mode

Enhancement

Typical Rise Time Ns

5

Maximum Gate Threshold Voltage V

5

Typical Gate Charge Vgs Nc

36@10V

Lead Shape

Through Hole

Pin Sayısı

3

Maximum Power Dissipation Mw

380000

Maximum Idss Ua

25

Maximum Drain Source Voltage V

500

Eu Rohs

Compliant with Exemption

Process Technology

HiperFET

Minimum Operating Temperature C

-55

Package Length

16.24(Max)

Mounting

Through Hole

Category

Power MOSFET

Package Height

21.45(Max)

Automotive

No

Pcb Changed

3

Maximum Drain Source Resistance Mohm

300@10V

Eccn Us

EAR99

Channel Type

N

Package Width

5.3(Max)

Maximum Continuous Drain Current A

20

Maximum Gate Source Voltage V

±30

Maximum Gate Source Leakage Current Na

100

Standard Package Name

TO-247

Typical Input Capacitance Vds Pf

1800@25V

Ppap

No

Maximum Operating Temperature C

150