IXFH180N20X3

Specifications

Maximum Power Dissipation Mw

735000

Typical Gate Charge Vgs Nc

154@10V

Pin Sayısı

3

Eu Rohs

Compliant with Exemption

Montaj Stili

Through Hole

Typical Turnoff Delay Time Ns

100

Number Of Channels

1 Channel

Pd Power Dissipation

735 W

Typical Turnon Delay Time Ns

30

Typical Fall Time Ns

12

Svhc Exceeds Threshold

Yes

Parça Durumu

Active

Tab

Tab

Hts

8541.29.00.95

Minimum Operating Temperature

- 55 C

Qg Gate Charge

154 nC

Package Width

5.21(Max)

Maximum Continuous Drain Current A

180

Ppap

No

Typical Input Capacitance Vds Pf

10300@25V

Rds On Drainsource Resistance

7.5 mOhms

Mounting

Through Hole

Maximum Drain Source Resistance Mohm

7.5@10V

Maks. Çalışma Sıcaklığı

+ 150 C

Maximum Drain Source Voltage V

200

Minimum Operating Temperature C

-55

Vgs Th Gatesource Threshold Voltage

2.5 V

Kılıf / Paket

To-247-3

Transistor Polarity

N-Channel

Vgs Gatesource Voltage

- 20 V, + 20 V

Typical Gate Charge10v Nc

154

Svhc

Yes

Technology

Si

Number Of Elements Per Chip

1

Channel Mode

Enhancement

Typical Rise Time Ns

28

Configuration

Single

Maximum Gate Source Voltage V

±20

Id Continuous Drain Current

180 A

Power Dissipation

735W