IXFH170N25X3

Specifications

Maximum Power Dissipation Mw

890000

Pin Sayısı

3

Typical Gate Charge Vgs Nc

190@10V

Eu Rohs

Compliant with Exemption

Montaj Stili

Through Hole

Pd Power Dissipation

960 W

Number Of Channels

1 Channel

Typical Turnoff Delay Time Ns

62

Typical Turnon Delay Time Ns

18

Typical Fall Time Ns

7

Minimum Operating Temperature

- 55 C

Tab

Tab

Hts

8541.29.00.95

Parça Durumu

Active

Svhc Exceeds Threshold

Yes

Maximum Continuous Drain Current A

170

Package Width

5.21(Max)

Qg Gate Charge

190 nC

Ppap

No

Typical Input Capacitance Vds Pf

13500@25V

Mounting

Through Hole

Rds On Drainsource Resistance

6.1 mOhms

Maximum Drain Source Resistance Mohm

7.4@10V

Maks. Çalışma Sıcaklığı

+ 150 C

Minimum Operating Temperature C

-55

Vgs Th Gatesource Threshold Voltage

2.5 V

Maximum Drain Source Voltage V

250

Transistor Polarity

N-Channel

Kılıf / Paket

TO-247-3

Typical Gate Charge10v Nc

190

Vgs Gatesource Voltage

- 20 V, + 20 V

Technology

Si

Number Of Elements Per Chip

1

Svhc

Yes

Typical Rise Time Ns

10

Channel Mode

Enhancement

Configuration

Single

Maximum Gate Source Voltage V

±20

Id Continuous Drain Current

170 A

Supplier Package

TO-247