IXFH150N30X3

Specifications

Montaj Stili

Through Hole

Eu Rohs

Compliant with Exemption

Typical Gate Charge Vgs Nc

177@10V

Pin Sayısı

3

Maximum Power Dissipation Mw

890000

Svhc Exceeds Threshold

Yes

Parça Durumu

Active

Tab

Tab

Hts

8541.29.00.95

Minimum Operating Temperature

- 55 C

Typical Turnon Delay Time Ns

40

Typical Fall Time Ns

14

Typical Turnoff Delay Time Ns

187

Number Of Channels

1 Channel

Pd Power Dissipation

890 W

Typical Input Capacitance Vds Pf

13100@25V

Ppap

No

Qg Gate Charge

254 nC

Package Width

5.21(Max)

Maximum Continuous Drain Current A

150

Maximum Drain Source Resistance Mohm

8.3@10V

Rds On Drainsource Resistance

8.3 mOhms

Mounting

Through Hole

Kılıf / Paket

TO-247-3

Transistor Polarity

N-Channel

Maximum Drain Source Voltage V

300

Minimum Operating Temperature C

-55

Vgs Th Gatesource Threshold Voltage

2.5 V

Maks. Çalışma Sıcaklığı

+ 150 C

Configuration

Single

Channel Mode

Enhancement

Typical Rise Time Ns

32

Svhc

Yes

Technology

Si

Number Of Elements Per Chip

1

Vgs Gatesource Voltage

- 20 V, + 20 V

Typical Gate Charge10v Nc

177

Power Dissipation

890W

Vds Drainsource Breakdown Voltage

300 V

Maximum Operating Temperature C

150