IXFH150N15P

Specifications

Channel Mode

Enhancement

Typical Rise Time Ns

33

Svhc Exceeds Threshold

Yes

Parça Durumu

Active

Configuration

Single

Tab

Tab

Hts

8541.29.00.95

Typical Turnoff Delay Time Ns

100

Typical Gate Charge10v Nc

190

Svhc

Yes

Operating Temp Range

-55C to 175C

Number Of Elements Per Chip

1

Typical Turnon Delay Time Ns

30

Typical Fall Time Ns

28

Tip

Power MOSFET

Maximum Drain Source Voltage V

150

Eu Rohs

Compliant with Exemption

Process Technology

HiperFET

Minimum Operating Temperature C

-55

Rad Hardened

No

Maximum Power Dissipation Mw

714000

Typical Gate Charge Vgs Nc

190@10V

Continuous Drain Current

150(A)

Pin Sayısı

3

Pcb Changed

3

Maximum Drain Source Resistance Mohm

13@10V

Number Of Elements

1

Eccn Us

EAR99

Channel Type

N

Package Height

21.46(Max)

Automotive

No

Category

Power MOSFET

Polarity

N

Package Length

16.26(Max)

Mounting

Through Hole

Operating Temperature Classification

Military

Drainsource Onvolt

150(V)

Gatesource Voltage Max

±20(V)

Ppap

No

Power Dissipation

714(W)