IXFH120N30X3

Specifications

Package Length

16.13(Max)

Operating Junction Temperature C

150

Category

Power MOSFET

Package Height

21.34(Max)

Continuous Drain Current Id

120A

Automotive

No

Typical Gate Plateau Voltage V

5.75

Eccn Us

EAR99

Channel Type

N

Pcb Changed

3

Typical Reverse Transfer Capacitance Vds Pf

3@25V

Maximum Positive Gate Source Voltage V

20

Id Continuous Drain Current

120 A

Maximum Gate Source Leakage Current Na

100

Maximum Gate Source Voltage V

±20

Typical Reverse Recovery Time Ns

145

Standard Package Name

TO-247

Maximum Operating Temperature C

150

Vds Drainsource Breakdown Voltage

300 V

Supplier Package

TO-247

Typical Output Capacitance Pf

1376

Maximum Pulsed Drain Current Tc25c A

280

Power Dissipation

735W

Technology

Si

Number Of Elements Per Chip

1

Svhc

Yes

Typical Gate Charge10v Nc

170

Vgs Gatesource Voltage

- 20 V, + 20 V

Configuration

Single

Channel Mode

Enhancement

Typical Rise Time Ns

30

Maks. Çalışma Sıcaklığı

+ 150 C

Typical Gate To Source Charge Nc

50

Transistor Polarity

N-Channel

Kılıf / Paket

TO-247-3

Process Technology

HiperFET

Vgs Th Gatesource Threshold Voltage

4.5 V

Minimum Operating Temperature C

-55

Maximum Drain Source Voltage V

300

Rds On Drainsource Resistance

11 mOhms