IXFH120N25T

Specifications

Channel Type

N

Pcb Changed

3

Maximum Drain Source Resistance Mohm

23@10V

Package Height

21.46(Max)

Automotive

No

Category

Power MOSFET

Package Length

16.26(Max)

Mounting

Through Hole

Maximum Operating Temperature C

150

Supplier Package

TO-247AD

Ppap

No

Typical Input Capacitance Vds Pf

11300@25V

Maximum Gate Source Leakage Current Na

200

Maximum Gate Source Voltage V

±20

Maximum Continuous Drain Current A

120

Package Width

5.3(Max)

Maximum Gate Threshold Voltage V

5

Channel Mode

Enhancement

Typical Rise Time Ns

16

Configuration

Single

Tab

Tab

Svhc Exceeds Threshold

Yes

Parça Durumu

Active

Typical Gate Charge10v Nc

180

Typical Turnoff Delay Time Ns

46

Number Of Elements Per Chip

1

Typical Turnon Delay Time Ns

32

Typical Fall Time Ns

19

Svhc

Yes

Process Technology

HiperFET

Minimum Operating Temperature C

-55

Maximum Drain Source Voltage V

250

Eu Rohs

Compliant with Exemption

Maximum Idss Ua

25

Maximum Power Dissipation Mw

890000

Pin Sayısı

3

Typical Gate Charge Vgs Nc

180@10V