IXFH110N10P

Specifications

Power Dissipation

480(W)

Maximum Operating Temperature C

175

Supplier Package

TO-247AD

Standard Package Name

TO-247

Package Type

TO-247AD

Maximum Gate Source Voltage V

±20

Pcb Changed

3

Eccn Us

EAR99

Number Of Elements

1

Channel Type

N

Package Height

21.45(Max)

Automotive

No

Category

Power MOSFET

Polarity

N

Package Length

16.24(Max)

Operating Temperature Classification

Military

Maximum Drain Source Voltage V

100

Process Technology

HiperFET

Minimum Operating Temperature C

-55

Rad Hardened

No

Lead Shape

Through Hole

Channel Mode

Enhancement

Typical Rise Time Ns

25

Configuration

Single

Typical Gate Charge10v Nc

110

Svhc

Yes

Operating Temp Range

-55C to 175C

Number Of Elements Per Chip

1

Tip

Power MOSFET

Ppap

No

Typical Input Capacitance Vds Pf

3550@25V

Package Width

5.3(Max)

Maximum Continuous Drain Current A

110

Maximum Drain Source Resistance Mohm

15@10V

Mounting

Through Hole

Gatesource Voltage Max

±20(V)

Drainsource Onvolt

100(V)

Eu Rohs

Compliant with Exemption

Maximum Power Dissipation Mw

480000

Continuous Drain Current

110(A)