IXFH10N80P

Specifications

Mounting

Through Hole

Package Length

16.24(Max)

Category

Power MOSFET

Automotive

No

Package Height

21.45(Max)

Maximum Drain Source Resistance Mohm

1100@10V

Pcb Changed

3

Channel Type

N

Eccn Us

EAR99

Package Width

5.3(Max)

Maximum Continuous Drain Current A

10

Maximum Gate Source Voltage V

±30

Standard Package Name

TO-247

Typical Input Capacitance Vds Pf

2050@25V

Ppap

No

Supplier Package

TO-247AD

Maximum Operating Temperature C

150

Svhc

Yes

Number Of Elements Per Chip

1

Typical Turnon Delay Time Ns

21

Typical Fall Time Ns

22

Typical Turnoff Delay Time Ns

62

Typical Gate Charge10v Nc

40

Parça Durumu

Active

Svhc Exceeds Threshold

Yes

Configuration

Single

Tab

Tab

Hts

8541.29.00.95

Typical Rise Time Ns

22

Channel Mode

Enhancement

Lead Shape

Through Hole

Typical Gate Charge Vgs Nc

40@10V

Pin Sayısı

3

Maximum Power Dissipation Mw

300000

Eu Rohs

Compliant with Exemption

Maximum Drain Source Voltage V

800

Minimum Operating Temperature C

-55

Process Technology

HiperFET