IXFB82N60P

Specifications

Eu Rohs

Compliant with Exemption

Maximum Drain Source Voltage V

600

Minimum Operating Temperature C

-55

Vgs Th Gatesource Threshold Voltage

5 V

Process Technology

HiperFET

Kılıf / Paket

PLUS-264-3

Montaj Stili

Through Hole

Transistor Polarity

N-Channel

Maximum Power Dissipation Mw

1250000

Maks. Çalışma Sıcaklığı

+ 150 C

Typical Gate Charge Vgs Nc

240@10V

Pin Sayısı

3

Typical Rise Time Ns

23

Channel Mode

Enhancement

Parça Durumu

Active

Minimum Operating Temperature

- 55 C

Configuration

Single

Tab

Tab

Hts

8541.29.00.95

Vgs Gatesource Voltage

- 30 V, + 30 V

Number Of Channels

1 Channel

Typical Turnoff Delay Time Ns

79

Pd Power Dissipation

1.25 kW

Typical Gate Charge10v Nc

240

Number Of Elements Per Chip

1

Typical Turnon Delay Time Ns

28

Technology

Si

Typical Fall Time Ns

24

Ppap

No

Supplier Package

PLUS 264

Vds Drainsource Breakdown Voltage

600 V

Maximum Operating Temperature C

150

Typical Input Capacitance Vds Pf

23000@25V

Maximum Gate Source Voltage V

±30

Package Width

5.31(Max)

Id Continuous Drain Current

82 A

Qg Gate Charge

240 nC

Maximum Continuous Drain Current A

82

Maximum Drain Source Resistance Mohm

75@10V

Pcb Changed

3