IXFB44N100Q3

Specifications

Channel Mode

Enhancement

Typical Rise Time Ns

30

Configuration

Single

Tab

Tab

Hts

8541.29.00.95

Parça Durumu

Active

Typical Gate Charge10v Nc

264

Typical Turnoff Delay Time Ns

66

Operating Temp Range

-55C to 150C

Number Of Elements Per Chip

1

Typical Turnon Delay Time Ns

48

Typical Fall Time Ns

28

Tip

Power MOSFET

Process Technology

HiperFET

Minimum Operating Temperature C

-55

Maximum Drain Source Voltage V

1000

Eu Rohs

Compliant with Exemption

Rad Hardened

No

Maximum Power Dissipation Mw

1560000

Pin Sayısı

3

Typical Gate Charge Vgs Nc

264@10V

Continuous Drain Current

44(A)

Eccn Us

EAR99

Number Of Elements

1

Channel Type

N

Pcb Changed

3

Maximum Drain Source Resistance Mohm

220@10V

Package Height

26.59(Max)

Automotive

No

Polarity

N

Category

Power MOSFET

Drainsource Onvolt

1000(V)

Gatesource Voltage Max

±30(V)

Package Length

20.29(Max)

Mounting

Through Hole

Operating Temperature Classification

Military

Maximum Operating Temperature C

150

Supplier Package

PLUS 264

Ppap

No

Power Dissipation

1560(W)