IXFB38N100Q2

Specifications

Polarity

N

Category

Power MOSFET

Operating Temperature Classification

Military

Package Length

20.29(Max)

Channel Type

N

Number Of Elements

1

Eccn Us

EAR99

Pcb Changed

3

Automotive

No

Package Height

26.59(Max)

Package Type

PLUS 264

Maximum Gate Source Voltage V

±30

Id Continuous Drain Current

38 A

Supplier Package

PLUS 264

Maximum Operating Temperature C

150

Vds Drainsource Breakdown Voltage

1 kV

Power Dissipation

890(W)

Seri

IXFB38N100

Typical Gate Charge10v Nc

250

Vgs Gatesource Voltage

- 30 V, + 30 V

Tip

Power MOSFET

Technology

Si

Number Of Elements Per Chip

1

Operating Temp Range

-55C to 150C

Typical Rise Time Ns

28

Channel Mode

Enhancement

Configuration

Single

Maks. Çalışma Sıcaklığı

+ 150 C

Minimum Operating Temperature C

-55

Process Technology

HiperFET

Maximum Drain Source Voltage V

1000

Rad Hardened

No

Transistor Polarity

N-Channel

Kılıf / Paket

PLUS-264-3

Gatesource Voltage Max

±30(V)

Drainsource Onvolt

1000(V)

Mounting

Through Hole

Rds On Drainsource Resistance

280 mOhms

Maximum Drain Source Resistance Mohm

250@10V

Maximum Continuous Drain Current A

38