IXFB210N30P3

Specifications

Typical Gate Charge10v Nc

268

Typical Turnoff Delay Time Ns

94

Number Of Elements Per Chip

1

Typical Turnon Delay Time Ns

46

Typical Fall Time Ns

13

Svhc

Yes

Maximum Gate Threshold Voltage V

5

Channel Mode

Enhancement

Typical Rise Time Ns

25

Configuration

Single

Hts

8541.21.00.95

Tab

Tab

Svhc Exceeds Threshold

Yes

Parça Durumu

Active

Maximum Idss Ua

50

Maximum Power Dissipation Mw

1890000

Pin Sayısı

3

Typical Gate Charge Vgs Nc

268@10V

Process Technology

HiperFET

Minimum Operating Temperature C

-55

Maximum Drain Source Voltage V

300

Eu Rohs

Compliant with Exemption

Category

Power MOSFET

Package Length

20.29(Max)

Mounting

Through Hole

Eccn Us

EAR99

Channel Type

N

Pcb Changed

3

Maximum Drain Source Resistance Mohm

14.5@10V

Package Height

26.59(Max)

Automotive

No

Maximum Gate Source Leakage Current Na

200

Maximum Gate Source Voltage V

±20

Maximum Continuous Drain Current A

210

Package Width

5.31(Max)

Maximum Operating Temperature C

150

Supplier Package

PLUS 264

Ppap

No

Typical Input Capacitance Vds Pf

16200@25V