IXFB210N20P

Specifications

Maximum Operating Temperature C

175

Vds Drainsource Breakdown Voltage

200 V

Supplier Package

PLUS 264

Ppap

No

Typical Input Capacitance Vds Pf

18600@25V

Maximum Gate Source Voltage V

±20

Maximum Continuous Drain Current A

210

Id Continuous Drain Current

210 A

Package Width

5.31(Max)

Channel Type

N

Pcb Changed

3

Maximum Drain Source Resistance Mohm

10.5@10V

Package Height

26.59(Max)

Automotive

No

Category

Power MOSFET

Package Length

20.29(Max)

Rds On Drainsource Resistance

10.5 mOhms

Mounting

Through Hole

Process Technology

HiperFET

Minimum Operating Temperature C

-55

Maximum Drain Source Voltage V

200

Eu Rohs

Compliant with Exemption

Transistor Polarity

N-Channel

Montaj Stili

Through Hole

Kılıf / Paket

PLUS-264-3

Maximum Power Dissipation Mw

1500000

Pin Sayısı

3

Typical Gate Charge Vgs Nc

255@10V

Maks. Çalışma Sıcaklığı

+ 175 C

Channel Mode

Enhancement

Typical Rise Time Ns

30

Configuration

Single

Tab

Tab

Minimum Operating Temperature

- 55 C

Parça Durumu

Active

Typical Gate Charge10v Nc

255

Pd Power Dissipation

1.5 kW

Seri

IXFB210N20

Typical Turnoff Delay Time Ns

70

Vgs Gatesource Voltage

- 20 V, + 20 V