IXFB170N30P

Specifications

Mounting

Through Hole

Package Length

20.29(Max)

Category

Power MOSFET

Automotive

No

Package Height

26.59(Max)

Channel Type

N

Maximum Drain Source Resistance Mohm

18@10V

Pcb Changed

3

Maximum Continuous Drain Current A

170

Package Width

5.31(Max)

Maximum Gate Source Voltage V

±20

Typical Input Capacitance Vds Pf

20@25V

Supplier Package

PLUS 264

Maximum Operating Temperature C

150

Ppap

No

Number Of Elements Per Chip

1

Typical Fall Time Ns

16

Typical Turnon Delay Time Ns

41

Typical Gate Charge10v Nc

258

Typical Turnoff Delay Time Ns

79

Hts

8541.29.00.95

Tab

Tab

Configuration

Single

Parça Durumu

Active

Typical Rise Time Ns

29

Channel Mode

Enhancement

Pin Sayısı

3

Typical Gate Charge Vgs Nc

258@10V

Maximum Power Dissipation Mw

1250000

Minimum Operating Temperature C

-55

Process Technology

HiperFET

Eu Rohs

Compliant with Exemption

Maximum Drain Source Voltage V

300