IXFB110N60P3

Specifications

Maximum Operating Temperature C

150

Supplier Package

PLUS 264

Ppap

No

Typical Input Capacitance Vds Pf

18000@25V

Maximum Gate Source Voltage V

±30

Maximum Continuous Drain Current A

110

Package Width

5.31(Max)

Channel Type

N

Pcb Changed

3

Maximum Drain Source Resistance Mohm

56@10V

Package Height

26.59(Max)

Automotive

No

Category

Power MOSFET

Package Length

20.29(Max)

Mounting

Through Hole

Process Technology

Polar3 HiperFET

Minimum Operating Temperature C

-55

Maximum Drain Source Voltage V

600

Eu Rohs

Compliant with Exemption

Maximum Power Dissipation Mw

1890000

Pin Sayısı

3

Typical Gate Charge Vgs Nc

254@10V

Channel Mode

Enhancement

Typical Rise Time Ns

30

Configuration

Single

Hts

8541.29.00.95

Tab

Tab

Parça Durumu

Active

Typical Gate Charge10v Nc

254

Typical Turnoff Delay Time Ns

106

Number Of Elements Per Chip

1

Typical Turnon Delay Time Ns

63

Typical Fall Time Ns

15