IXFB100N50Q3

Specifications

Maximum Power Dissipation Mw

1560000

Typical Gate Charge Vgs Nc

255@10V

Pin Sayısı

3

Maximum Drain Source Voltage V

500

Eu Rohs

Compliant with Exemption

Process Technology

HiperFET

Minimum Operating Temperature C

-55

Typical Turnoff Delay Time Ns

50

Typical Gate Charge10v Nc

255

Number Of Elements Per Chip

1

Typical Turnon Delay Time Ns

40

Typical Fall Time Ns

15

Channel Mode

Enhancement

Typical Rise Time Ns

20

Parça Durumu

Active

Configuration

Single

Tab

Tab

Hts

8541.29.00.95

Maximum Gate Source Voltage V

±30

Package Width

5.31(Max)

Maximum Continuous Drain Current A

100

Ppap

No

Maximum Operating Temperature C

150

Supplier Package

PLUS 264

Typical Input Capacitance Vds Pf

13800@25V

Category

Power MOSFET

Package Length

20.29(Max)

Mounting

Through Hole

Pcb Changed

3

Maximum Drain Source Resistance Mohm

49@10V

Eccn Us

EAR99

Channel Type

N

Package Height

26.59(Max)

Automotive

No