IXFB100N50P

Specifications

Rds On Drainsource Resistance

49 mOhms

Mounting

Through Hole

Maximum Drain Source Resistance Mohm

49@10V

Qg Gate Charge

240 nC

Package Width

5.31(Max)

Maximum Continuous Drain Current A

100

Typical Input Capacitance Vds Pf

20000@25V

Ppap

No

Typical Fall Time Ns

26

Typical Turnon Delay Time Ns

36

Typical Turnoff Delay Time Ns

110

Number Of Channels

1 Channel

Pd Power Dissipation

1.25 kW

Parça Durumu

Active

Hts

8541.21.00.95

Tab

Tab

Minimum Operating Temperature

- 55 C

Typical Gate Charge Vgs Nc

240@10V

Pin Sayısı

3

Maximum Power Dissipation Mw

1890000

Montaj Stili

Through Hole

Eu Rohs

Compliant

Package Length

20.29(Max)

Category

Power MOSFET

Package Height

26.59(Max)

Continuous Drain Current Id

100A

Automotive

No

Pcb Changed

3

Eccn Us

EAR99

Channel Type

N

Id Continuous Drain Current

100 A

Maximum Gate Source Voltage V

±30

Power Dissipation

1.89kW

Maximum Operating Temperature C

150

Vds Drainsource Breakdown Voltage

500 V

Supplier Package

ISOPLUS 264

Number Of Elements Per Chip

1

Technology

Si

Vgs Gatesource Voltage

- 30 V, + 30 V

Typical Gate Charge10v Nc

240