IXFA8N65X2

Specifications

Parça Durumu

Active

Automotive

No

Configuration

Single

Typical Rise Time Ns

11

Maximum Drain Source Resistance Mohm

450@10V

Channel Mode

Enhancement

Channel Type

N

Eccn Us

EAR99

Typical Fall Time Ns

15

Number Of Elements Per Chip

1

Typical Turnon Delay Time Ns

17

Category

Power MOSFET

Typical Turnoff Delay Time Ns

29

Typical Gate Charge10v Nc

11

Typical Input Capacitance Vds Pf

790@25V

Eu Rohs

Compliant

Ppap

No

Maximum Drain Source Voltage V

650

Minimum Operating Temperature C

-55

Maximum Operating Temperature C

150

Typical Gate Charge Vgs Nc

11@10V

Maximum Continuous Drain Current A

8

Maximum Gate Source Voltage V

±30

Maximum Power Dissipation Mw

150000