IXFA60N25X3

Specifications

Pin Sayısı

3

Typical Gate Charge Vgs Nc

50@10V

Maks. Çalışma Sıcaklığı

+ 150 C

Lead Shape

Gull-wing

Maximum Power Dissipation Mw

320000

Transistor Polarity

N-Channel

Montaj Stili

SMD/SMT

Kılıf / Paket

TO-263-3

Minimum Operating Temperature C

-55

Vgs Th Gatesource Threshold Voltage

2.5 V

Maximum Drain Source Voltage V

250

Eu Rohs

Compliant with Exemption

Number Of Elements Per Chip

1

Typical Turnon Delay Time Ns

18

Technology

Si

Typical Fall Time Ns

7

Typical Gate Charge10v Nc

50

Pd Power Dissipation

320 W

Typical Turnoff Delay Time Ns

62

Number Of Channels

1 Channel

Vgs Gatesource Voltage

- 20 V, + 20 V

Configuration

Single

Tab

Tab

Minimum Operating Temperature

- 55 C

Parça Durumu

Active

Channel Mode

Enhancement

Typical Rise Time Ns

10

Maximum Continuous Drain Current A

60

Id Continuous Drain Current

60 A

Qg Gate Charge

50 nC

Package Width

9.4(Max)

Maximum Gate Source Voltage V

±20

Typical Input Capacitance Vds Pf

3610@25V

Standard Package Name

TO-263

Maximum Operating Temperature C

150

Vds Drainsource Breakdown Voltage

250 V

Supplier Package

D2PAK

Ppap

No

Package Length

10.41(Max)

Rds On Drainsource Resistance

19 mOhms