IXFA5N100P-TRL

Specifications

Typical Gate Charge10v Nc

33.4

Vgs Gatesource Voltage

- 30 V, + 30 V

Number Of Elements Per Chip

1

Technology

Si

Channel Mode

Enhancement

Typical Rise Time Ns

13

Configuration

Single

Maks. Çalışma Sıcaklığı

+ 150 C

Lead Shape

Gull-wing

Process Technology

HiperFET

Vgs Th Gatesource Threshold Voltage

3 V

Minimum Operating Temperature C

-55

Maximum Drain Source Voltage V

1000

Transistor Polarity

N-Channel

Kılıf / Paket

TO-263-3

Category

Power MOSFET

Package Length

10.41(Max)

Eccn Us

EAR99

Channel Type

N

Pcb Changed

2

Package Height

4.83(Max)

Automotive

No

Maximum Gate Source Voltage V

±30

Id Continuous Drain Current

5 A

Vds Drainsource Breakdown Voltage

1 kV

Maximum Operating Temperature C

150

Supplier Package

D2PAK

Standard Package Name

TO-263

Pd Power Dissipation

250 W

Typical Turnoff Delay Time Ns

30

Number Of Channels

1 Channel

Typical Fall Time Ns

37

Typical Turnon Delay Time Ns

12

Tab

Tab

Minimum Operating Temperature

- 55 C

Parça Durumu

Active

Maximum Power Dissipation Mw

250000

Pin Sayısı

3

Typical Gate Charge Vgs Nc

33.4@10V

Eu Rohs

Compliant