IXFA56N30X3

Specifications

Typical Gate Charge Vgs Nc

56@10V

Pin Sayısı

3

Maximum Power Dissipation Mw

320000

Montaj Stili

SMD/SMT

Eu Rohs

Compliant

Typical Fall Time Ns

10

Typical Turnon Delay Time Ns

21

Number Of Channels

1 Channel

Typical Turnoff Delay Time Ns

64

Pd Power Dissipation

320 W

Parça Durumu

Active

Minimum Operating Temperature

- 55 C

Tab

Tab

Hts

8541.29.00.95

Package Width

9.4(Max)

Qg Gate Charge

56 nC

Maximum Continuous Drain Current A

56

Typical Input Capacitance Vds Pf

3750@25V

Ppap

No

Mounting

Surface Mount

Rds On Drainsource Resistance

27 mOhms

Maximum Drain Source Resistance Mohm

27@10V

Lead Shape

Gull-wing

Maks. Çalışma Sıcaklığı

+ 150 C

Kılıf / Paket

TO-263-3

Transistor Polarity

N-Channel

Maximum Drain Source Voltage V

300

Minimum Operating Temperature C

-55

Vgs Th Gatesource Threshold Voltage

2.5 V

Technology

Si

Number Of Elements Per Chip

1

Vgs Gatesource Voltage

- 20 V, + 20 V

Typical Gate Charge10v Nc

56

Configuration

Single

Typical Rise Time Ns

26

Channel Mode

Enhancement

Id Continuous Drain Current

56 A

Maximum Gate Source Voltage V

±20

Standard Package Name

TO-263

Supplier Package

D2PAK