IXFA36N20X3

Specifications

Maximum Operating Temperature C

150

Vds Drainsource Breakdown Voltage

200 V

Supplier Package

D2PAK

Standard Package Name

TO-263

Maximum Gate Source Voltage V

±20

Id Continuous Drain Current

36 A

Pcb Changed

2

Eccn Us

EAR99

Channel Type

N

Package Height

4.83(Max)

Automotive

No

Category

Power MOSFET

Package Length

10.41(Max)

Maximum Drain Source Voltage V

200

Minimum Operating Temperature C

-55

Vgs Th Gatesource Threshold Voltage

2.5 V

Kılıf / Paket

TO-263-3

Transistor Polarity

N-Channel

Lead Shape

Gull-wing

Maks. Çalışma Sıcaklığı

+ 150 C

Channel Mode

Enhancement

Typical Rise Time Ns

30

Configuration

Single

Vgs Gatesource Voltage

- 20 V, + 20 V

Typical Gate Charge10v Nc

21

Technology

Si

Number Of Elements Per Chip

1

Ppap

No

Typical Input Capacitance Vds Pf

1425@25V

Qg Gate Charge

21 nC

Package Width

9.4(Max)

Maximum Continuous Drain Current A

36

Maximum Drain Source Resistance Mohm

45@10V

Rds On Drainsource Resistance

45 mOhms

Mounting

Surface Mount

Eu Rohs

Compliant

Montaj Stili

SMD/SMT

Maximum Power Dissipation Mw

170000

Typical Gate Charge Vgs Nc

21@10V

Pin Sayısı

3