IXFA26N50P3

Specifications

Maximum Power Dissipation Mw

500000

Maximum Idss Ua

25

Typical Gate Charge Vgs Nc

42@10V

Lead Shape

Gull-wing

Pin Sayısı

3

Maximum Drain Source Voltage V

500

Eu Rohs

Compliant

Process Technology

HiperFET

Minimum Operating Temperature C

-55

Kılıf / Paket

TO-263-3

Transistor Polarity

N-Channel

Montaj Stili

SMD/SMT

Typical Turnoff Delay Time Ns

38

Number Of Channels

1 Channel

Typical Gate Charge10v Nc

42

Number Of Elements Per Chip

1

Typical Turnon Delay Time Ns

21

Typical Fall Time Ns

5

Technology

Si

Channel Mode

Enhancement

Typical Rise Time Ns

7

Maximum Gate Threshold Voltage V

5

Parça Durumu

Active

Hts

8541.21.00.95

Tab

Tab

Configuration

Single

Maximum Gate Source Voltage V

±30

Maximum Gate Source Leakage Current Na

100

Id Continuous Drain Current

26 A

Package Width

9.4(Max)

Maximum Continuous Drain Current A

26

Ppap

No

Vds Drainsource Breakdown Voltage

500 V

Maximum Operating Temperature C

150

Supplier Package

D2PAK

Standard Package Name

TO-263

Typical Input Capacitance Vds Pf

2220@25V

Category

Power MOSFET

Package Length

10.41(Max)

Rds On Drainsource Resistance

240 mOhms