IXFA230N075T2

Specifications

Configuration

Single

Tab

Tab

Parça Durumu

Active

Maximum Gate Threshold Voltage V

4

Typical Rise Time Ns

18

Channel Mode

Enhancement

Number Of Elements Per Chip

1

Typical Turnon Delay Time Ns

23

Typical Fall Time Ns

15

Typical Gate Charge10v Nc

178

Typical Turnoff Delay Time Ns

33

Minimum Operating Temperature C

-55

Process Technology

HiperFET

Eu Rohs

Compliant

Maximum Drain Source Voltage V

75

Pin Sayısı

3

Lead Shape

Gull-wing

Typical Gate Charge Vgs Nc

178@10V

Maximum Power Dissipation Mw

480000

Maximum Idss Ua

25

Automotive

Unknown

Package Height

4.83(Max)

Channel Type

N

Eccn Us

EAR99

Maximum Drain Source Resistance Mohm

4.2@10V

Pcb Changed

2

Mounting

Surface Mount

Package Length

10.41(Max)

Category

Power MOSFET

Typical Input Capacitance Vds Pf

10500@25V

Standard Package Name

TO-263

Supplier Package

D2PAK

Maximum Operating Temperature C

175

Ppap

Unknown

Maximum Continuous Drain Current A

230

Package Width

9.4(Max)

Maximum Gate Source Leakage Current Na

200

Maximum Gate Source Voltage V

±20