IXFA20N85XHV-TRL

Specifications

Supplier Package

TO-263HV

Typical Fall Time Ns

20

Package Length

10.2(Max)

Maximum Drain Source Voltage V

850

Maks. Çalışma Sıcaklığı

+ 150 C

Qg Gate Charge

63 nC

Channel Mode

Enhancement

Technology

Si

Configuration

Single

Rds On Drainsource Resistance

330 mOhms

Number Of Channels

1 Channel

Eccn Us

EAR99

Typical Input Capacitance Vds Pf

1660@25V

Montaj Stili

SMD/SMT

Typical Turnoff Delay Time Ns

44

Process Technology

HiperFET

Maximum Continuous Drain Current A

20

Automotive

No

Channel Type

N

Maximum Gate Source Voltage V

±30

Category

Power MOSFET

Number Of Elements Per Chip

1

Package Width

9.4(Max)

Typical Gate Charge Vgs Nc

63@10V

Maximum Operating Temperature C

150

Tab

Tab

Maximum Drain Source Resistance Mohm

330@10V

Minimum Operating Temperature

- 55 C

Mounting

Surface Mount

Typical Turnon Delay Time Ns

20

Vgs Th Gatesource Threshold Voltage

3.5 V

Minimum Operating Temperature C

-55

Ambalaj

Tape and Reel

Parça Durumu

Active

Maximum Gate Threshold Voltage V

5.5

Pd Power Dissipation

540 W

Vds Drainsource Breakdown Voltage

850 V

Maximum Idss Ua

25

Kılıf / Paket

TO-263-3

Vgs Gatesource Voltage

- 30 V, + 30 V